Diffusion anormalement accélérée de phosphore à partir d'une couche de silicium implantée d'ions sous pressionVASIN, A. S; OKULICH, V. I; PANTELEEV, V. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 3, pp 483-487, issn 0015-3222Article

A study of silicon interstitial kinetics using silicon membranes: applications to 2D dopant diffusionAHN, S. T; GRIFFIN, P. B; SHOTT, J. D et al.Journal of applied physics. 1987, Vol 62, Num 12, pp 4745-4755, issn 0021-8979Article

Diffusion d'impuretés en faible concentration dans les liquides semi-quantiquesBUISHVILI, L. L; TUGUSHI, A. I.ZETF. Pis′ma v redakciû. 1986, Vol 91, Num 6, pp 2097-2100, issn 0044-4510Article

Interstitial hydrogen in crystalline germaniumKHOO, G. S; ONG, C. K.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 10, pp 1385-1392, issn 0022-3719Article

Clustering, precipitation and diffusion in ion-implanted siliconBENNETT, D. J; PRICE, T. E.Semiconductor science and technology. 1994, Vol 9, Num 1, pp 5-9, issn 0268-1242Article

Maskless selective diffusion of Si into GaAsSHIEH, C. L; MANTZ, J; KOHN, E et al.Electronics Letters. 1989, Vol 25, Num 1, pp 32-33, issn 0013-5194, 2 p.Article

Transport behavior of water confined in carbon nanotubesYINGCHUN LIU; QI WANG.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085420.1-085420.4, issn 1098-0121Article

Diffusion of hydrogen molecules in fluorine-doped single-mode fibresIINO, A; MATSUBARA, K; OGAI, M et al.Electronics Letters. 1989, Vol 25, Num 1, pp 78-79, issn 0013-5194, 2 p.Article

Modelling of the chemical-pump effect and C clusteringCOLOMBEAU, B; COWERN, N. E. B.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1339-1342, issn 0268-1242, 4 p.Article

Segregation-controlled kinetics of fast impurity diffusion in polycrystalline solidsSTOLWIJK, N. A; POISSON, C. H; BERNARDINI, J et al.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 32, pp 5843-5856, issn 0953-8984Article

Diffusion d'une impureté ionisée dans un semiconducteur dopéGORNUSHKINA, E. D; MALKOVICH, R. SH.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 2, pp 244-250, issn 0015-3222Article

Calculation of the solvent and solute enhancement factors in BCC metals assuming a hypothetical structure with fourteen first nearest neighborsPELLEG, Joshua; SEGEL, V.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 14, issn 0953-8984, 145409.1-145409.11Article

Stress corrosion cracking and hydrogen diffusion in magnesiumATRENS, Andrej; WINZER, Nicholas; GUANGLING SONG et al.Advanced engineering materials (Print). 2006, Vol 8, Num 8, pp 749-751, issn 1438-1656, 3 p.Article

Transient enhanced diffusion during post-implant annealing of siliconBENNETT, D. J; PRICE, T. E.Semiconductor science and technology. 1994, Vol 9, Num 8, pp 1535-1542, issn 0268-1242Article

Generalized Langevin-equation approach to impurity diffusion in solids: perturbation theoryMUNAKATA, T.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8016-8026, issn 0163-1829, 1Article

Effect of excess intrinsic point defects on erbium diffusion in siliconALEXANDROV, O. V; SOBOLEV, N. A; SHEK, E. I et al.Semiconductor science and technology. 1995, Vol 10, Num 7, pp 948-951, issn 0268-1242Article

Control of impurity diffusion in silicon by IR laser excitationSHIRAI, K; MATSUKAWA, K; MORIWAKI, T et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4685-4688, issn 0921-4526, 4 p.Conference Paper

A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologiesBACCUS, B; WADA, T; SHIGYO, N et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 648-661, issn 0018-9383Article

Migration stimulée par la recombinaison et formation de défautsPAVLOVICH, V. N.Fizika tverdogo tela. 1988, Vol 30, Num 10, pp 2974-2980, issn 0367-3294Article

Diffusion of delta doped boron in silicon following oxidationO'NEILL, A. G; BARLOW, R. D; BISWAS, R. G et al.Electronics Letters. 1993, Vol 29, Num 3, pp 263-264, issn 0013-5194Article

Solution of the differential equation of statistical kinematics. Planar diffusion of hydrogen in a palladium monocrystalSOBASZEK, A; ADAMOWICZ, L.Physica. B, Condensed matter. 1993, Vol 192, Num 4, pp 291-302, issn 0921-4526Article

Two-time three-equation method for analysis of oxidation-enhanced and -retarded diffusions and growth of oxidation stacking faults in siliconOKINO, T; YOSHIDA, M.Japanese journal of applied physics. 1990, Vol 29, Num 1, pp 5-7, issn 0021-4922, 1Article

Dégagement hors des cristaux de LiF de l'hélium introduit par différentes méthodesKLYAVIN, O.V; MAMYRIN, B.A; KHABARIN, L.V et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 165-172, issn 0367-3294Article

Analysis of two-step thermal oxidation of siliconGHIBAUDO, G.Journal of applied physics. 1987, Vol 62, Num 8, pp 3485-3488, issn 0021-8979Article

Perturbation theory of impurity diffusionCOMBS, J. A; KUNZ, C.Physical review. B, Condensed matter. 1987, Vol 36, Num 1, pp 289-310, issn 0163-1829Article